(1ตัว) 2SK170 K170 N-Channel MOSFET JFET

Field Effect Transistor Silicon N Channel Junction Type 2SK170
• Recommended for first stages of EQ and M. C. head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.) (VD S = 10 V, VGS = 0, IDSS = 3 mA)
• High breakdown voltage: VGDS = −40 V
• Low noise: En = 0.95 nV/Hz1/2 (typ.)
( VDS = 10 V, ID = 1 mA, f = 1 kHz)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)